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| MDD 310 High Power Diode Modules IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V 3 VRSM V 900 1300 1500 1700 2100 2300 Symbol IFRMS IFAVM IFSM VRRM V 800 1200 1400 1600 2000 2200 Type 3 1 2 1 2 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Maximum Ratings 480 A 305 A (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 11 500 12 200 9 600 10 200 662 000 620 000 460 000 430 000 -40...+150 150 -40...+125 A A A A A2s A2s A2s A2s C C C V~ V~ Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 q q q q Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms oi2dt Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q q q q TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Mounting torque (M5) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module other values see Fig. 6/7 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Characteristic Values 40 mA 1.2 0.75 0.63 0.129 0.065 0.169 0.0845 760 275 12.7 9.6 50 V V mW K/W K/W K/W K/W mC A mm mm m/s2 Dimensions in mm (1 mm = 0.0394") TVJ = 125C, IF = 400 A; -di/dt = 50 A/ms Creepage distance on surface Strike distance through air Maximum allowable acceleration 20 12 14 936 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass (c) 2000 IXYS All rights reserved 1-3 MDD 310 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 oi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load (c) 2000 IXYS All rights reserved 2-3 MDD 310 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.15 K/W 30 DC Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 ZthJC 0.10 0.05 Constants for ZthJC calculation: i 0 0.00 10-3 Rthi (K/W) 0.0035 0.0165 0.1091 ti (s) 0.0099 0.168 0.456 10-2 10-1 100 101 s 102 t 1 2 3 0.20 K/W 30 DC 0.15 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 ZthJK 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0165 0.1091 0.04 ti (s) 0.0099 0.168 0.456 1.36 838 0 0.00 10-3 10-2 10-1 100 101 s 102 t 1 2 3 4 (c) 2000 IXYS All rights reserved 3-3 |
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